| PART |
Description |
Maker |
| 3197 A3197ELT A3197EU A3197LLT A3197LU A3196LLT A3 |
PROTECTED HIGH-TEMPERATURE OPEN-COLLECTOR HALL-EFFECT LATCH
PROTECTED, HIGH-TEMPERATURE, OPEN-COLLECTOR HALL-EFFECT LATCH
PROTECTED/ HIGH-TEMPERATURE/ OPEN-COLLECTOR HALL-EFFECT LATCH
Protected,High-Temperature,Hall-Effect Latch With Active Pull-Down(保护型，工作于高温，集电极开路霍尔效应锁存器)
IC SENSOR QWHEEL ROTARY 14TSSOP
Protected,High-Temperature,Hall-Effect Latch With Active Pull-Down(淇?????宸ヤ?浜??娓╋???????璺??灏??搴??瀛??)
Protected, high-temperature, hall-effect latch with active pull-down
|
ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| HVS0805 HVS2010 |
High Voltage / High Temperature Thick Film Chip Resistors
|
Riedon Powertron
|
| HTDR-3 |
300 NANOSECOND AT HIGH TEMPERATURE- FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES
|
Electronic devices inc.
|
| PRAHT182 PRAHT100 PRAHT135 |
High Temperature (230 °C) High Precision Thin Film Wraparound Chip Resistor Arrays
|
Vishay Siliconix
|
| BTA412Y BTA412Y-600B BTA412Y-600C BTA412Y-800B BTA |
12 A Three-quadrant triacs, insulated, high commutation, high temperature
|
NXP Semiconductors N.V.
|
| LT6107 |
High Temperature High Side Current Sense Amp
|
Linear Technology Corporation
|
| BTA416Y-800B BTA416Y-800C BTA416Y-600B BTA416Y-600 |
16 A Three-quadrant triacs, insulated, high commutation, high temperature
|
NXP Semiconductors N.V.
|
| IHTH-1125MZ-5A |
High Current Through Hole Inductor, High Temperature Series
|
Vishay Siliconix
|
| PHT |
High Stability - High Temperature (230 °C) Thin Film Wraparound Chip Resistors, Sulfur Resistant
|
Vishay Siliconix
|
| TPSMC7.5 TPSMC7.5A TPSMC6.8A TPSMC6.8AHE3_57T TPSM |
Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions
|
Vishay Siliconix
|
|
